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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
Details
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
Resource
Journal of The Electrochemical Society, 159(2), H177-H182
Journal
Journal of The Electrochemical Society
Journal Volume
159
Journal Issue
2
Pages
-
Date Issued
2012
Date
2012
Author(s)
Banerjee, W.
Maikap, S.
Rahaman, S.Z.
Prakash, A.
Tien, T.-C.
Li, W.-C.
JER-REN YANG
DOI
10.1149/2.067202jes
URI
http://ntur.lib.ntu.edu.tw//handle/246246/243650
SDGs
[SDGs]SDG7
Type
journal article
File(s)
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Name
92.pdf
Size
23.39 KB
Format
Adobe PDF
Checksum
(MD5):cbaad89519982b75bb4f6715e3b1c1ff
