An ultra-wide-band 0.4-10-GHz LNA in 0.18-μm CMOS
Journal
IEEE Transactions on Circuits and Systems II: Express Briefs
Journal Volume
54
Journal Issue
3
Pages
217-221
Date Issued
2007
Author(s)
Abstract
A two-stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. With the common-gate configuration employed as the input stage, the broad-band input matching is obtained and the noise does not rise rapidly at higher frequency. By combining the common-gate and common-source stages, the broad-band characteristic and small area are achieved by using two inductors. This LNA has been fabricated in a 0.18-μm CMOS process. The measured power gain is 11.2-12.4 dB and noise figure is 4.4-6.5 dB with — 3-dB bandwidth of 0.4-10 GHz. The measured IIP3 is —6 dBm at 6 GHz. It consumes 12 mW from a 1.8-V supply voltage and occupies only 0.42 mm2. © 2007, IEEE. All rights reserved.
Subjects
Common-gate configuration; ultra-wide-band (UWB) CMOS low-noise amplifier (LNA)
SDGs
Other Subjects
Broadband networks; CMOS integrated circuits; Spurious signal noise; Common-gate configuration; Low noise amplifiers
Type
journal article