Shubnikov–de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well
Resource
INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol. 17 (2002) 999–1003
Semicond. Sci. Technol. 17 (2002) 999–1003
Journal
INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol
Semicond. Sci. Technol
Journal Volume
17
Journal Issue
2002
Pages
-
Date Issued
2002
Date
2002
Author(s)
Hang, D.R.
Huang, C.F.
Hung, W.K.
Chang, Y.H.
Chen, J.C.
Yang, H.C.
Chen, Y.F.
Shih, D.K.
Chu, T.Y.
Lin, H.H.
DOI
246246/2006111501211829
Abstract
We present the first investigation of Shubnikov–de Haas (SdH) oscillations
of two-dimensional electron gas formed in an InAsN/InGaAs single
quantum well (QW) grown on an InP substrate using gas source molecular
beam epitaxy and a radio-frequency (rf ) plasma nitrogen source. The
photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases
compared with that of InAs/InGaAs QW. This agrees with the bowing effect
due to the incorporation of nitrogen atoms. The nitrogen content can be
estimated to be 0.4% using the PL peak positions as well as x-ray
diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm−2 and the effective mass is 0.1±0.01m0. The enhancement of the
effective mass is mainly due to the incorporation of the nitrogen atoms in the
InAs lattice, which is consistent with a recent study on InAsN bulk alloys.
The large increase of the effective mass cannot be explained by the simple
band anticrossing model. In addition, we observe a temperatureindependent
magnetoresistivity at a critical magnetic field. Our analysis
supports the fact that the value of the critical exponent in the quantum Hall
effect is not universal.
Publisher
Taipei:National Taiwan University Dept Elect Engn
Type
journal article
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