Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C
Journal
IEEE Electron Device Letters
Journal Volume
27
Journal Issue
2
Pages
111-113
Date Issued
2006
Author(s)
Abstract
Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type. © 2006 IEEE.
SDGs
Type
journal article