Power-amplifier modules covering 70-113 GHz using MMICs
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
49
Journal Issue
1
Pages
9-16
Date Issued
2001
Author(s)
Samoska, L.
Gaier, T.
Peralta, A.
Liao, H.-H.
Leong, Y.C.
Weinreb, S.
Chen, Y.C.
Nishimoto, M.
Lai, R.
Abstract
A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, will also be addressed in this paper. Index Terms-GaAs, HEMT, millimeter wave, MMIC, power-amplifier module. © 2001 IEEE.
Subjects
High electron mobility transistors; Microprocessor chips; Microstrip lines; Millimeter wave devices; Monolithic microwave integrated circuits; Oscillators (electronic); Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Waveguides; Aluminum gallium arsenide; Power amplifiers
Type
journal article