A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

Resource

Power Semiconductor Devices and ICs, 1995. ISPSD '95. Proceedings of the 7th International Symposium on

Journal

Power Semiconductor Devices and ICs, 1995. ISPSD '95. Proceedings of the 7th International Symposium on

Pages

-

Date Issued

1995-05

Date

1995-05

Author(s)

Liu, C.M.

Shone, F.C.

Kuo, J.B.

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

00515057.pdf

Size

306.54 KB

Format

Adobe PDF

Checksum

(MD5):3156c6cc63d4d3c36e5456782ac65a08