Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings

Journal

1994 International Electron Devices and Materials Symposium, EDMS 1994

Date Issued

1994

Author(s)

Wu, Y.-L.

Kuo, K.-M.

DOI

10.1109/EDMS.1994.863900

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/500712

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063572022&doi=10.1109%2fEDMS.1994.863900&partnerID=40&md5=449b1baa325cc914bd7316130a2cf2d4

Type

conference paper