Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings
Journal
1994 International Electron Devices and Materials Symposium, EDMS 1994
Date Issued
1994
Author(s)
Abstract
Higher field-effect channel mobility and improved radiation hardness of n-MOSFET with gate oxide prepared by multiple rapid thermal N/sub 2/O annealings are reported. The samples with fresh gate oidde and conventional single N/sub 2/O annealed gate oxide with comparable annealing time are also compared.
SDGs
Type
conference paper