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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model
Details
Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model
Journal
International Semiconductor Device Research Symposium ISDRS
Date Issued
2011-12
Author(s)
S. W. Fang
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
DOI
10.1109/isdrs.2011.6135367
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/366364
Type
conference paper
