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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device
Details
Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device
Journal
EUROSOI
Date Issued
2009-12
Author(s)
H. J. Hung
J. I. Lu
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
DOI
10.1109/isdrs.2009.5378214
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351954
Type
conference paper
