Photoluminescence study on Be-doped InAsPSb and undoped InPSb bulk layers
Date Issued
2008
Date
2008
Author(s)
Chen, Chen-I
Abstract
In this thesis, we have investigated the photoluminescence of Be-doped InAsPSbnd undoped InPSb grown on InAs substrates by gas-source molecular beam epitaxy.he p-type Be-doped InAs0.66P0.24Sb0.10 shows an asymmetric low temperature PLpectral line-shape with its peak in the high energy side. This line-shape which isimilar to those of heavily n-doped GaAs and InP, and is ascribed to the transitionrom tail states below the conduction band to the degenerate valence bands. Theocalized tail states break the momentum conservation, which results in the peculiarsymmetric line-shape. A theoretical calculation considering the Burstein-Moss shiftnd many-body effect in the heavily Be-doped InAs0.66P0.24Sb0.10 was performed. Thealculated energy gaps are higher than the experimental data by ~20 meV, which isttributed to the energy difference between the tail states and the conduction bandinimum.or InPSb lattice-matched on InAs, two emission bands were resolved. The firstne is with Gaussian-like line-shape and is attributed to deep-level defects. Itsehavior can be illustrated by configuration coordination model. The other resolvedmission band, located in low energy side, is ascribed to the carrier recombination inhe tail states.
Subjects
Be
Photoluminescence
InAsPSb
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-97-R95943140-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):50a46faeb88aac51df2ee38d411dec87