Single-voltage-supply operation of Ga0.51In0.49P/AlGaAS/In0.15Ga0.85As PHEMTs with high-power density
Journal
Microwave and Optical Technology Letters
Journal Volume
39
Journal Issue
3
Pages
196-199
Date Issued
2003
Author(s)
Abstract
Abstract A Ga 0.51 In 0.49 P/AlGaAs/In 0.15 Ga 0.85 As PHEMT with the highest power density among all single‐voltage‐supply operated devices, to our knowledge, was demonstrated for the first time. Operating at 1.8‐GHz under class‐A bias conditions, this FET shows 18.84‐dBm (382.8 mW/mm) saturated power and 17.25‐dBm (265.4 mW/mm) P 1dB when the drain voltage is 3.6 V. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 196–199, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11167
SDGs
Type
journal article