Phase-change memory devices based on gallium-doped indium oxide
Journal
Applied Physics Letters
Journal Volume
94
Pages
113503
Date Issued
2009-01
Author(s)
Abstract
We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼250°C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2 O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO. © 2009 American Institute of Physics.
SDGs
Other Subjects
Activation energy; Gallium; Indium; Phase transitions; Pulse code modulation; Bixbyite; Crystalline phase transitions; Crystallization temperatures; Device resistances; Gallium-doped indium oxides; Joule heating effects; Low-resistance state; Nanosecond electric pulse; Orders of magnitudes; Phase changes; Phase-change memories; Phase change memory
Type
journal article