Applications of Laser Annealing on Oxide Semiconductors and Thin Film Transistors
Date Issued
2012
Date
2012
Author(s)
Chen, Hong-Wei
Abstract
Since in 1960 the American scientist Maiman reported the first ruby laser, lasers have been widely used in many industries, such as communication, medical industry, and measurements etc. In recent years, lasers also have been applied to the display and semiconductor industries. Because of the capability of high power densities, the laser processing is commonly used in the fabrication of poly silicon TFTs, to crystallize amorphous silicon.
Oxide semiconductors have also gained increasing attention in recent years due to merits such as low fabrication temperature, transparency, and high mobility even in the amorphous phase. These benefits of oxide semiconductors render their high potential to replace a-Si and poly-Si TFTs.
In this thesis, we applied the laser processing on the IGZO semiconductors and TFTs. First we used the TLM test structure to study the effects of laser processing on the metal-semiconductor contact resistances. We found that by proper laser processing conditions, the specific contact resistivity could go down to 6.5×10-5Ω-cm2. In addition, we studied the effects of the IGZO growth conditions on the contact resistances.
With these, we fabricated top-gate self-aligned IGZO TFTs utilizing laser processing. The top-gate self-aligned TFT structure has the benefits such as reduction of the mask count, increase in the aperture ratio, and precise control of the channel length.
Subjects
laser annealing
IGZO
self-aligned top-gate thin film transistors
oxide semiconductors
Type
thesis
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