Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors
Resource
Solid-State Electronics 36 (9): 1229-1234
Journal
Solid-State Electronics
Journal Volume
36
Journal Issue
9
Pages
1229-1234
Date Issued
1993
Date
1993
Author(s)
Huang, Chao-Hsing
Abstract
In this study, the characteristics of InAlAs/InGaAs double heterojunction bipolar transistors (DHBT's) with abrupt and graded base-collector junction structures are investigated. We find that because of the large conduction band discontinuity between the InGaAs base and the InAlAs collector, the base-collector abrupt heterojunction notch will accumulate a two-dimensional electron gas (2DEG) and the heterojunction spike will be pushed up. Therefore, poor knee-shape and reach-through effects appear in the device even with a 500 Å-thick undoped InGaAs layer sandwiched between the base and collector. This finding has never been observed in DHBT's with small band discontinuity material systems such as InP/InGaAs and AlGaAs/GaAs. The InAlAs/InGaAs DHBT with a graded base-collector junction shows no knee-shape and reach-through effects, because the heterojunction notch has been smoothed out. © 1993.
Other Subjects
Electrons; Gases; Heterojunctions; Semiconducting indium compounds; Double heterojunction bipolar transistors; Electron gas; Heterojunction bipolar transistors; Bipolar transistors
Type
journal article
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