A closed-form physical drain current model considering energy balance equation and source resistance for deep submicron n-channel metal-oxide-semiconductor devices
Journal
Japanese Journal of Applied Physics
Journal Volume
33
Journal Issue
11R
Pages
614-617
Date Issued
1994
Author(s)
Ma S.-Y
Abstract
This paper reports a concise physical model considering energy transport and source resistance for deep submicron n-channel metal-oxide-semiconductor (NMOS) devices. As verified by the experimental data, the closed-form analytical model shows good accuracy in the IV characteristics. © 1994 IOP Publishing Ltd.
Subjects
Carrier temperature; Deep submicron; MOS energy transport; Source resistance
SDGs
Type
journal article