Femtosecond investigations of spectral hole burning in semiconductor lasers
Journal
Applied Physics Letters
Journal Volume
66
Journal Issue
13
Pages
1650-1652
Date Issued
1995
Author(s)
Abstract
An investigation of spectral hole burning effects is reported in the gain region of InGaAs/AlGaAs strained-layer single quantum well diode lasers, using a heterodyne nondegenerate pump-probe technique. This technique permits simultaneous measurement of the femtosecond dynamics and spectral dependence of transient gain in semiconductor lasers. At high bias current, strong spectral hole burning effects were observed.
SDGs
Type
journal article