406 MHz modulation bandwidth of GaN-based light-emitting diodes with improved transparent p-contact design
Journal
CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
Date Issued
2017
Author(s)
Abstract
In this report, the optical frequency responses of GaN-based LEDs with different p-contact designs are presented. The higher modulation bandwidth is owing to better current spreading with embedded transparency contact layer (TCL). The f-3dB-J curve of the LEDs with TCL exhibits higher injection current density and optical modulation bandwidth. The highest f-3dB up to 406 MHz is achieved.
Subjects
Bandwidth; Frequency response; Gallium nitride; Light; Light modulation; Manufacture; Modulation; Optical communication; Optical signal processing; Semiconductor device manufacture; Semiconductor diodes; Semiconductor junctions; Wide band gap semiconductors; Contact layers; Current spreading; GaN based LED; GaN-based light-emitting diodes; Injection current density; Modulation bandwidth; Optical frequency response; Visible light communications (VLC); Light emitting diodes
Type
conference paper