Hole Transport Characteristic Of Wrinkling SiGe Thin Film
Date Issued
2006
Date
2006
Author(s)
Ma, Wei-Yu
DOI
zh-TW
Abstract
Until today, gate length of MOSFET have scaled down to nano-scale. As semiconductor process keep regenerating, ITRS predict that the channel length will smaller than sixteen nano. Process technologic followed technic of nowadays will not keep scaling down. In order to follow Moor’s law, nano carbon tube, resonant tunneling device, spin FET, atomic or spin electronic device will be a solution to this problem. This paper propose a novel structure becoming electronic device to solve this problem.
Wrinkling SiGe thin film is a novel structure. So we don’t have too much about this structure. But we anticipate that this structure will be applied to semiconductor device.
Based on strained SiGe heterostructure, we estimate I-V characteristic of wrinkling sample in deferent temperature in this paper. Furthermore, we us nextnano3 to calculate the band structure of wrinkling sample and reason the path of hole transport out.
There are five chapters in this paper:
Chapter 1: How research about nano technology and semiconductor
industry affect this world.
Chapter 2: Theorems about this experiment.
Chapter 3: Process Si1-xGex/Si1-yGey wrinkling sample.
Chapter 4: I-V measurement about wrinkling sample and reason the path
of hole transport out
Chapter 5: Future work.
Subjects
矽鍺技術
應變矽鍺技術
皺紋型矽鍺薄膜
載子傳輸
SiGe
strained SiGe
wrinkling SiGe thin film
carrier transport
Type
thesis