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Successful growth of two different quantum dots on one substrate
Journal
?Physica E- Low-dimensional Systems and Nanostructures?
Journal Volume
21
Journal Issue
2–4
Pages
372-375
Date Issued
2004
Author(s)
C. F. Tsai
J. H. Cheng
S. C. Yang
C. C. Hau
Abstract
We report the successful growth of ZnSe and ZnTe quantum dots (QDs) embedded in ZnS on GaAs substrate. These QDs have good optical properties and show quantum confinement effect. High-resolution electron scanning microscope studies show that these QDs are grown in Volmer-Weber mode. It is found that the size of the QDs is controlled by the growth duration. When the growth time is short, high density of QDs could be fabricated, but with a long growth time the small QDs get together to form a large cluster. We also show that with this growth method it is possible to grow both ZnSe quantum and ZnTe QDs on one substrate at the same time. For this dual QDs system, two peaks corresponding to the emission from the ZnSe dots (3.0 eV, blue-violet) and ZnTe dots (2.6 eV, green-blue) could be observed at the same time in the photoluminescence measurement. © 2003 Elsevier B.V. All rights reserved.
Subjects
Light-emitting diodes; Quantum dots; ZnSe; ZnTe
Other Subjects
High resolution electron microscopy; Light emitting diodes; Metallorganic chemical vapor deposition; Morphology; Photoluminescence; Scanning electron microscopy; Semiconducting zinc compounds; Semiconductor growth; Surfaces; Thermal effects; ZnSe; ZnTe; Semiconductor quantum dots
Publisher
Elsevier B.V.
Type
journal article