Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Analysis of STI Mechanical-Stress Induced Effects on 40nm PD SOI NMOS Devices
Details
Analysis of STI Mechanical-Stress Induced Effects on 40nm PD SOI NMOS Devices
Journal
IEDMS
Date Issued
2008-11
Author(s)
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/342565
Type
conference paper