An Ultra-Low Voltage Ultra-wideband Low Noise Amplifier
Date Issued
2006
Date
2006
Author(s)
Yu, Yueh-Hua
DOI
zh-TW
Abstract
This thesis presents an ultra-low voltage low noise amplifier for ultra-wide band application in UMC 0.18um 1P6M CMOS technology. Using the architecture of distributed amplifier with the inductive source degeneration, the LNA is demonstrated to achieve broadband and low noise. The common-source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. Excellent noise performance of LNA is obtained by applying suitable source degeneration inductance and selecting proper device geometry and bias. The measured gain of the fully-integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The input and output return-losses are more than 10dB within the 3dB-band. The average noise figure is 4.65dB. The measured IIP3 at 6GHz is 0dBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.
Subjects
低雜訊放大器
超低電壓
低功率
分散式放大器
超寬頻
CMOS
LNA
ultra-low voltage
low power
distributed amplifier
UWB
Type
thesis
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