Ultrahigh-Power-Bandwidth Product and Nonlinear Photoconductance Performances of Low-Temperature-Grown GaAs-Based Metal–Semiconductor–Metal Traveling-Wave Photodetectors
Resource
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 11, NOVEMBER 2002
Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Journal Volume
VOL. 14
Journal Issue
NOVEMBER 2002
Pages
-
Date Issued
2002-11
Date
2002-11
Author(s)
DOI
246246/200611150121674
Abstract
Maximum-output-power and bandwidth performances
are usually two tradeoff parameters in the design of
high-speed photodetectors (PDs). In this paper, we report record
high-peak output voltage ( 30 V) together with ultrahigh-speed
performance (1.8 ps, 190 GHz) observed in low-temperature-
grown GaAs (LTG-GaAs)-based metal-semiconductor-metal
(MSM) traveling-wave photodetectors (TWPDs) at a wavelength
of 800 nm. Ultrahigh-peak output power and ultrahigh-electrical
bandwidth performances were achieved due to superior MSM
microwave guiding structure, short carrier trapping time, and the
capability to take high bias voltage ( 30 V) with a LTG-GaAs
layer. Under such a high bias voltage, a significant nonlinear
photocurrent increase with the bias voltage was observed. The
nonlinear photoconductance and ultrahigh-output power-bandwidth
performances opens a new way in the application of
high-performance optoelectronic mixers and photomixer devices.
Subjects
Metal–semiconductor–metal (MSM)
nonlinearities
photodetectors (PDs)
traveling-wave devices
Publisher
Taipei:National Taiwan University Dept Mech Engn
Type
journal article
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