High Sensitivity IGZO Thin Film Transistor Biosensors for the Detection of Epstein-Barr Virus Protein
Date Issued
2014
Date
2014
Author(s)
Chen, Shu-Wen
Abstract
A biosensor structure consisting of an Indium-Gallium-Zinc-Oxide (IGZO) thin film transistor (TFT) and a gold extended sensing pad was demonstrated. The IGZO-TFT was the device for signal extraction, and the sensing pad could conduct protein charges resulting channel current changed. There were two kinds of target protein in the thesis, mouse IgG in the mouse serum and Epstein-Barr virus antibodies. In the detection for mouse IgG, the biosensor was functionalized by applying ZnO nanorods on the pad to modify the gold surface. ZnO nanorods improved the sensitivity of the biosensors by high surface-to-volume ratio. In the detection for EBV antibodies, the device was functionalized by self-assembled monolayer and crosslinker to solve the problem of protein immobilization. Furthermore, the top gate voltage analysis was employed to improve reliability and repeatability of the experiment. Finally, the TFT-biosensor was compared with the conventional methods for protein detection. Time-saving and high sensitivity were the significant advantages of the TFT biosensor. The bio-TFT is able to selectively detect 10pg/ml mouse IgG in the serum solution and 10pg/ml EBV antibodies in the buffer solution.
Subjects
小鼠免疫球蛋白G
人類皰疹病毒第四型
薄膜電晶體
高敏感度生物感測器
蛋白質檢測
Type
thesis
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