Realization of High-Quality Al2O3Top-Gate Dielectric Layer for Black Phosphorus Dual-Gate Field-Effect Transistors
Journal
ACS Applied Electronic Materials
Journal Volume
7
Journal Issue
23
Start Page
10604
End Page
10609
ISSN
26376113
Date Issued
2025-12-09
Author(s)
Abstract
In this report, we show the characteristics of a black phosphorus (BP) dual-gate transistor with top-gate dielectric layer made of Al2O3 using exposure mode atomic layer deposition (E-mode ALD). From the electrical and material analysis, we found that this ALD process had an annealing effect on the Germanium (Ge)-BP metal contacts which increased the ON current (Ion) of the back-gate characteristics by 12 times and increased the field-effect hole mobility (μp,FE) by 17.9 times. Raman spectroscopy was employed to assess the passivation capability of the Al2O3 layer in suppressing BP oxidation under ambient conditions. Furthermore, electrical characterization demonstrated that the Al2O3 film grown via this process exhibits high dielectric quality and a low leakage current density of 0.5 pA/μm2.
Subjects
aluminum oxide (Al2O3)
atomic layer deposition (ALD)
black phosphorus
dual-gate FET
germanium
phosphorus oxide
Publisher
American Chemical Society
Type
journal article