Using Electron Beam Lithography To Manufacture High-Mobility Graphene Field Effect Transistors
Date Issued
2015
Date
2015
Author(s)
Chang, Chao-Chen
Abstract
“Graphene” is the center of the topic in this thesis. First, this thesis reviews the history and fundamental electronic property of graphene, and it explains why graphene became the most popular material recently. Graphene field effect transistor is one of the important research topics among the diverse researches of graphene. Due to the above reasons, this thesis focuses on graphene field effect transistor. The high mobility property result in once the electrode deposit on graphene, it can defeat other material. However, the performance of graphene is expected to be better and better. As a result, some use single crystal graphene that make the channel better, others use self-assembled monolayer to make the wafer smoother. In first part of this thesis, we measure the contact resistance of graphene and metal. Based on the measuring results, we choose the best one to be the electrode of graphene field effect transistor. Furthermore, we use electron beam lithography and polymer free method to reach the single crystal carrier mobility researched by other teams. By this method, we can use polycrystalline graphene to reach higher mobility. Thus, the process will be much simpler than before.
Subjects
graphene field effect transistor
electron beam lithography
polymer-free
Transmission line model
Type
thesis
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ntu-104-R02941123-1.pdf
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