Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O
Journal
Applied Physics Letters
Journal Volume
69
Journal Issue
25
Pages
3875-3877
Date Issued
1996
Author(s)
Abstract
Room-temperature anodic oxidation (ANO) followed by rapid thermal nitridation in N2O was used as new method to prepare thin nitrided oxides. It was found that the ANO nitrided oxides demonstrate better interfacial property and breakdown endurance than rapid thermal oxidation (RTO) nitrided oxides. The concentration of nitrogen incorporated in ANO nitrided oxide is larger than that in RTO nitrided oxides. It is believed that the loose density and the existence of hydrogen related species in anodic oxides formed by room-temperature anodization cause nitrogen to diffuse easier into oxide and pile up at Si/SiO2 interface during N2O nitridation. In addition, the self-readjustment of anodization current through the weak path in oxide is beneficial to thin gate oxides.
SDGs
Type
journal article