Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
Journal
Nanoscale Research Letters
Journal Volume
10
Journal Issue
1
Pages
1-7
Date Issued
2015
Author(s)
Abstract
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.
Type
journal article