DC and RF characteristics of Ga2O3/GaN single nanowire MOSFET
Journal
ECS Transactions
Journal Volume
50
Journal Issue
6
Pages
75-79
Date Issued
2012
Author(s)
Abstract
We reported transport characterization on [11-20] GaN single nanowire (SNW)-MOSFET laterally- and directionally- grown on c-plane sapphire substrates. The 60nm-dia. Ga2O3/GaN SNW-MOSFET of 50 nm gate length was shown to exhibit a high saturation current of 130μA, transconductance of 64μS, and unity current gain bandwidth fT at 150GHz. From a 3D diffusion and drift model analysis, it is shown that a polarization induced 2D electron gas (2DEG) density of 7×10^12 /cm2 with mobility of 1000cm2/V-sec confined at the interface of semi-polar {1-10-1} GaN/Ga2O3 was responsible for the high-speed transport characteristics.
Type
conference paper