Low-temperature grown graphene films by using molecular beam epitaxy
Journal
Applied Physics Letters
Journal Volume
101
Journal Issue
22
Date Issued
2012
Author(s)
Lin, M.-Y.
Guo, W.-C.
Wu, M.-H.
Wang, P.-Y.
Liu, T.-H.
Pao, C.-W.
Lin, S.-Y.
Abstract
Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 °C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth. © 2012 American Institute of Physics.
Other Subjects
Carbon atoms; Cu foil; Current modulation; Few-layer graphene; Graphene growth; Graphene transistors; High quality; Low-temperature grown; Molecular dynamics simulations; Room temperature; Transistor architecture; Copper; Epitaxial growth; Molecular beam epitaxy; Molecular dynamics; Graphene
Type
journal article