The Development of AlN/GaN Light Emitting Diode Grown by Plasma-Enhanced Atomic Layer Deposition
Date Issued
2015
Date
2015
Author(s)
Tang, Hong-Chih
Abstract
In this thesis, we present the operational procedure of plasma enhanced atomic layer deposition (PE-ALD) system and the growth, analysis, fabrication, characterization of Si-based nitride light emitting devices. The following instrument of X-ray photoelectron spectroscope (XPS), ellipsometry, and surface profiler were used to characterize the thickness, growth rate and composition of the materials grown by the PE-ALD system. From the data analysis made on the ellipsometry and surface profiler measurement, we identified the materials growth rate under ALD mode correctly. From the XPS data analysis, we identified the material’s binding energy position. From above analysis, we have studied four oxide material including ZnO, HfO2, Al2O3, Ga2O3 and two nitride materials including AlN, GaN from our PE-ALD system. Si-based nitride light-emitting devices base upon the plasma enhancement ALD grown different active layer nitride were further fabricated and characterized. From the current-voltage, electroluminescene (EL), we prove that double layer nitride light-emitting devices can be operated with higher forward voltage and gave more light-emitting intensity. Based on the normalized EL spectrum, we found that different active layer thichnesses light-emitting devices will cause blue-shift.
Subjects
PEALD
GaN
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-104-R02941074-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):64ce58de816dc444c31502e99c9740c3