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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents
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Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents
Journal
17th Indium Phosphide and Related Materials
Date Issued
2005-01
Author(s)
H. D. Sun
A. H. Clark
S. Calvez
M. D. Dawson
D. K. Shih
HAO-HSIUNG LIN
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/317539
Type
conference paper