High Temperature Tolerant Ge-on-Si Single Photon Avalanche Diode at the Communication Wavelength
Journal
IEEE Electron Device Letters
Journal Volume
45
Journal Issue
8
Start Page
1413
End Page
1416
ISSN
0741-3106
1558-0563
Date Issued
2024-08
Author(s)
Abstract
We present a practical design concept to reduce the noise of Ge-on-Si single photon avalanche diodes to improve temperature operation. In this letter, three different values of barrier height design have been investigated, and all devices exhibit ultra-low leakage current (<10 pA) and low noise-equivalent power (<10 fWHz−1/2). A high photon detection efficiency of 24.7 % and effective suppression of the dark count rate enable photon response at high temperatures up to 330 K with low and high barrier height designs, respectively. With our proposed structure design, the initial progress made by Ge-on-Si SPADs in overcoming challenges associated with low temperatures is underscored, emphasizing its potential in light detection and ranging applications across ambient and elevated temperatures.
SDGs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article