Improved temperature characteristics of semiconductor lasers due to Carrier redistribution among nonidentical multiple quantum wells
Journal
Pacific Rim Conference on Lasers and Electro-Optics, CLEO
Journal Volume
1
Pages
110
Date Issued
2003
Author(s)
Abstract
Semiconductor lasers with nonidentical InGaAsP/InP multiple quantum wells for optical communication are experimented to show the improved temperature characteristics. We explore the dependence of carrier distribution on temperature and discover the novel temperature characteristics of semiconductor lasers with nonidentical multiple quantum wells, which are different from conventional ones with identical multiple quantum wells. The origin is due to the strongly temperature-dependent Fermi-Dirac distribution, which favors carriers in high-energy states at high temperature. As a result, carriers redistribute among those quantum wells as temperature varies, It causes the lasing wavelength much less dependent on temperature, compared to the bandgap shrinkage. The carrier redistribution favoring high-energy states also significantly improves the characteristic temperature of short-wavelength mode.
Subjects
Characteristic temperature; Fermi-Dirac distribution; Nonidentical multiple quantum wells; Nonuniform carrier distribution
SDGs
Other Subjects
Electric currents; Energy gap; Fermi level; Heterojunctions; Optical communication; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor quantum wells; Carrier distribution; Wavelength; Quantum well lasers
Type
conference paper
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