Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (Fin-HEMTs) through narrowing fin structure's width
Journal
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Journal Volume
2017-January
Pages
1��2��
Date Issued
2017
Author(s)
Abstract
In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.
SDGs
Type
conference paper