Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (Fin-HEMTs) through narrowing fin structure's width
Journal
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Journal Volume
2017-January
Pages
1��2��
Date Issued
2017
Author(s)
Type
conference paper