Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

Resource

Semiconductor Device Research Symposium, 2003 International

Journal

International Semiconductor Device Research Symposium (ISDRS’03)

Date Issued

2003-12

Author(s)

H.-M. Wu

J.-Y. Lin

L.-H. Peng

C.-M. Lee

J.-I. Chyi

E. Chen

DOI

URI

Type

conference paper

File(s)

Name

01272156.pdf

Size

137.94 KB

Format

Adobe PDF

Checksum

(MD5):f20cad072ee6978d159a159a6e151820