Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation
Resource
Semiconductor Device Research Symposium, 2003 International
Journal
International Semiconductor Device Research Symposium (ISDRS’03)
Date Issued
2003-12
Author(s)
Abstract
The authors investigate the annealing effects on the interfacial properties of gallium oxide (Ga/sub 2/O/sub 3/) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga/sub 2/O/sub 3//GaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800/spl deg/C. The authors I-V and C-V analysis on the MOS device reveals a low interfacial density of state /spl sim/5/spl times/10/sup 10/ cm/sup -2/eV/sup -1/ and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga/sub 2/O/sub 3/ with post O/sub 2/ annealing is suitable for power device application.
SDGs
Type
conference paper
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