Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary
Journal
IEEE Transactions on Electron Devices
Journal Volume
60
Journal Issue
3
Pages
1122-1127
Date Issued
2013-03
Author(s)
Abstract
This paper presents an analytical hot-carrier effect model for n-channel poly-Si thin-film transistors biased in strong inversion based on degradation of tail states at grain boundary near drain after stress. Via a stress-time-dependent tail state model, the degradation of tail state distribution and drain current after stress could be predicted as verified by the experiment data. Based on this model, both the tail state density and the characteristic decay energy of the tail state distribution in the damaged region increase with the stress time, which determine the degradation of the drain current.
Type
journal article