18-26 GHz low-noise amplifiers using 130- and 90-nm bulk CMOS technologies
Resource
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Journal
Radio Frequency integrated Circuits (RFIC) Symposium, 2005
Pages
-
Date Issued
2005-06
Date
2005-06
Author(s)
DOI
1529-2517
Abstract
Two 18-26 GHz CMOS low-noise amplifiers using 130- and 90-nm bulk CMOS technologies are described in this paper. The thin-film microstrip (TFMS) LNA using a 130-nm CMOS process demonstrates a peak gain of 12.9 dB at 21 GHz with 3-dB bandwidth of 18.6 to 26.3 GHz and a noise figure (NF) of better than 5.4 dB between 20 and 26 GHz. The coplanar waveguide (CPW) amplifier fabricated by a 90-nm CMOS process presents a peak gain of 16.2 dB with a 3-dB bandwidth of 18 to 26 GHz, and a NF of better than 4 dB from 18 to 26 GHz.
SDGs
Type
journal article
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