Origin of Boron Contamination of the Intrinsic Amorphous Silicon Hydrogen Alloys in Glow Discharge System
Resource
Jorunal of Electrochemical Society, v.136, p.3011-3016
Journal
Journal of the Electrochemical Society
Journal Volume
136
Journal Issue
10
Pages
3011-3016
Date Issued
1989
Author(s)
Abstract
Boron contamination of the intrinsic amorphous ilicon hydrogen alloys deposited in a single chamber system using both low (29 kHz) and high (10 MHz) frequency glow discharge has been studied in detail. The contamination process was simulated by flowing the p-type deposition gas through the system with or without urning on the plasma. Several meth-ods were applied to reduce the contamination and their effects were investigated by measuring the change of the light conductivity and the activation energy of the contaminated i layer. A model that emphasizes the role of plasma in the con-tamination processes was proposed to explain the observed r sults. It was found that when using low frequency plasma deposition a dummy cathode method and "soft " deposition of a thin a-Si:H can be applied to reduce the boron contamina-tion problem. Hydrogenated amorphous silicon (a-Si:H) prepared by glow discharge deposition haspresently received wide in-terest as a low cost semiconductor material especially in the fabrication of p-i-n solar cells (1-5). The p-type and n-type doping of a-Si:H was achieved by using the mixture of B2H6 or PH3 with Sill4, respectively (6). To fabricate the
SDGs
Type
journal article