Turn-off transient analysis of a double diffused metal-oxide-semiconductor device considering quasi saturation
Journal
Japanese Journal of Applied Physics
Journal Volume
34
Journal Issue
2S
Pages
869-873
Date Issued
1995
Author(s)
Liu C.-M
Abstract
This paper reports the turn-off transient of a double diffused metal-oxide-semiconductor (DMOS) device considering the quasi-saturation behavior. Based on the two-dimensional (2D) simulation result, during the input ramp-down period of 100 ps, the accumulated electrons below the gate oxide are pushed toward the p region belowthe lateral channel toward the source, causing a surge in source current. After the input ramp-down period, theseelectrons are withdrawn from the drain by the quasi-saturation current. © 1995 The Japan Society of Applied Physics.
Subjects
DMOS; Quasi-saturation; Turn-off transient
Other Subjects
Computer simulation; Electric currents; Electric resistance; Electrons; Semiconductor device structures; Semiconductor doping; Substrates; Diffused metal oxide semiconductor device; Electron density; Quasi saturation; Turn off transient; Two dimensional transient analysis; MOS devices
Type
journal article