針對次微米級高深寬比微結構關鍵尺寸量測之創新式深紫外光波長掃描式散射術與系統
Other Title
Novel DUV Wavelength-scanning Scatterometry and System for Sub-micron Scale High-aspect-ratio Microstructures
Journal
科儀新知
Journal Issue
242
Start Page
15
End Page
27
ISSN
1019-5440
Date Issued
2025-03
Author(s)
Abstract
隨著半導體3D封裝技術的發展，進而使高深寬比RDL與TSV結構已經成為各層間關鍵訊號傳導通道，進而使市場上亟需一套完整的量測流程用於該類微結構之各項關鍵尺寸量測。本研究提出了一種結合DUV光譜式反射術與波長掃描瞳面影像散射術的混合量測系統來解決高深寬比結構帶來的挑戰。經與FIB/SEM量測結果相比，本團隊所提出的混合式量測策略於量測各項關鍵尺寸時的量測偏差皆小於3%，確認本系統具備量測此類高深寬比微結構的量測能力。
With the development of semiconductor 3D packaging technology, high aspect ratio RDL and TSV structures have become critical signal transmission interfaces between layers. Therefore, there is an urgent demand for a comprehensive measurement technology to measure the critical dimensions of high aspect ratio structures accurately. This study proposes a hybrid metrology measurement system that combines DUV reflectometry and wavelength-scanning back focal plane image scatterometry to address the challenges posed by high aspect ratio structures. Compared to FIB/SEM measurement results, our hybrid metrology measurement result achieves a measurement bias of less than 3% for all critical dimensions, demonstrating the system's capability for measuring high aspect ratio microstructures.
Type
journal article