Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Journal Volume
27
Journal Issue
3
Pages
1261-1266
Date Issued
2009
Author(s)
Chang, S.-T.
Liao, M.-H.
Lee, C.-C.
Huang, J.
Wang, W.-C.
DOI
URI
URL
Type
conference paper

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