Infrared characteristics of SiGe on SOI and heterojunction internal photoemission infrared photodetector
Date Issued
2006
Date
2006
Author(s)
Lin, Ruei-Long
DOI
en-US
Abstract
Recently, infrared detectors provide greatest contributions and functions in military, medical and astronomy. In order to integrability with the readout circuitry, we think highly of the devices mainly fabricated by SiGe. And the Si1-xGex/Si heterojunction internal photoemission (HIP) infrared photodetectors have many advantages, such as excellent uniformity, sensitivity to normally incident radiation, higher responsivity and easier integration with readout circuitry.
Besides, silicon-on-insulator (SOI) technology has been used in CMOS application in recent years, and it have many advantages, such as low leakage-current, low parasitic capacitances, low power and high speed.
In this thesis, SiGe/Si heterojunction internal photoemission infrared photodetector has been fabricated on SOI wafer. The infrared characteristics of the structure are measured by Fourier Transform Infrared (FTIR) spectrometer.
Subjects
矽
鍺
矽鍺
異質接面
紅外光
偵測器
Si
Ge
SiGe
heterojunction
infrared
detector
Type
thesis
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