Fabrication and Characterization of Al2O3/InAs Metal-Oxide-Semiconductor Capacitor
Date Issued
2015
Date
2015
Author(s)
Li, Zhen-Hao
Abstract
In this study, we deposited high dielectric constant material Al2O3 on InAs substrate by ALD and fabricated the Metal-oxide-semiconductor capacitor (MOSCAP). We applied the Try-methyl-aluminum (TMA) pretreatment before oxide growth by ALD, and native oxides was effectively suppressed, which is confirmed by XPS. By TEM image, we found that the oxide layer is amorphous and considered to be good at suppressing gate leakage current, which is about 1×10-8 A/cm2 at -1 V. We also applied post metal annealing to improve the Fermi-level pinning due to interface traps and the capacitance modulation was improved to 32.3 % at room temperature. We measured frequency-variant capacitance-voltage curve under room temperature and low temperature environment. We found that the post-metal-annealed device didn’t inverse in inversion region in low temperature environment (120 K), indicating that we succeeded in improving the interface trap. The interface trap density near mid-gap was 1.14×1013 cm-2eV-1, which is extracted by conductance method.
Subjects
InAs
Al2O3
ALD
MOSCAP
Post metal annealing
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-104-R01943166-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):40bd65050aecfc84ce1fb9defac1b1bd