Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates

Journal

International Electron Devices Meeting, 1996

Date Issued

1996

Author(s)

Ren, F

Hobson, WS

Kuo, JM

Lothian, JR

Mannaerts, JP

Kwo, J

Chen, YK

Cho, A'Y

URI

http://scholars.lib.ntu.edu.tw/handle/123456789/323255

Description

San Francisco, CA, USA

Type

journal article