Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control
Journal
Nanotechnology
Journal Volume
22
Journal Issue
27
Pages
275604
Date Issued
2011-07
Author(s)
Chien-Wei Chiu
Ting-Wei Liao
Kuen-Yu Tsai
Fu-Min Wang
Yuen-Wuu Suen
Chieh-Hsiung Kuan
CHIEH-HSIUNG KUAN
Abstract
The local melting point of a Ge thin film can be controlled by a hole-array pattern on the host Si substrate due to the variations in the stress distribution and the surface morphology induced by the pattern. A simple annealing process is developed from this effect to produce Ge NCs with a single-domain-crystal size over 20 nm, confirmed by transmission electron microscopy and Raman spectroscopy, from an electron-gun-evaporated Ge thin film on the patterned Si substrate. The effect of the dimensions of the hole array is also investigated. Photoluminescence observed around 1157 nm from some of the samples shows the possibility of improving the infrared emission capability by this proposed method.
Type
journal article