Publication: A study of the dark currents of InSb charge injection devices
| cris.lastimport.scopus | 2025-05-13T22:05:37Z | |
| cris.virtual.department | Photonics and Optoelectronics | en_US |
| cris.virtual.department | Electrical Engineering | en_US |
| cris.virtual.department | Electronics Engineering | en_US |
| cris.virtual.orcid | 0000-0003-3408-6538 | en_US |
| cris.virtualsource.department | eec11164-f12d-4ae3-9699-d79bdb380db2 | |
| cris.virtualsource.department | eec11164-f12d-4ae3-9699-d79bdb380db2 | |
| cris.virtualsource.department | eec11164-f12d-4ae3-9699-d79bdb380db2 | |
| cris.virtualsource.orcid | eec11164-f12d-4ae3-9699-d79bdb380db2 | |
| dc.contributor.author | Sun, T.P. | en_US |
| dc.contributor.author | Liao, R.H. | en_US |
| dc.contributor.author | Wang, C.H. | en_US |
| dc.contributor.author | Hong, H.M. | en_US |
| dc.contributor.author | Chang, H. | en_US |
| dc.contributor.author | Wu, C.W. | en_US |
| dc.contributor.author | Liu, J.S. | en_US |
| dc.contributor.author | HAO-HSIUNG LIN | en_US |
| dc.date.accessioned | 2020-06-11T06:39:33Z | |
| dc.date.available | 2020-06-11T06:39:33Z | |
| dc.date.issued | 1996 | |
| dc.identifier.doi | 10.1007/BF00326201 | |
| dc.identifier.scopus | 2-s2.0-0030263109 | |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/500381 | |
| dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030263109&doi=10.1007%2fBF00326201&partnerID=40&md5=7983dc3f8aa06aabbf5f46e2a6bf6db7 | |
| dc.relation.ispartof | Optical and Quantum Electronics | |
| dc.relation.journalissue | 10 | |
| dc.relation.journalvolume | 28 | |
| dc.relation.pages | 1287-1294 | |
| dc.title | A study of the dark currents of InSb charge injection devices | en_US |
| dc.type | journal article | en |
| dspace.entity.type | Publication |