Threshold voltage modulation of enhancement-mode InGaAs schottky-gate Fin-HEMTs

Journal

IEEE Electron Device Letters

Journal Volume

40

Journal Issue

4

Pages

534-537

Date Issued

2019

Author(s)

Chang, L.-C.

Dai, C.-J.

DOI

10.1109/LED.2019.2902349

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/505941

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064069660&doi=10.1109%2fLED.2019.2902349&partnerID=40&md5=062ca902e5ae1dc26adebd5b9d8cbe4e

Type

journal article