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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering
Details
Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering
Journal
Journal of Applied Physics
Journal Volume
105
Journal Issue
9
Date Issued
2009
Author(s)
Chang, C.-H.
Hwu, J.-G.
JENN-GWO HWU
DOI
10.1063/1.3120942
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-67249095674&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/347694
Type
journal article
