Growth of III-V Semiconductor Quantum Dots and Device Application

The research topics of this project are:
growth of In(Ga)As/GaAs quantum dots,
analysis of their optical properties, and
application as light-emitting devices.
InGaAs/GaAs quantum-dot structures
have extended the emission wavelength to
1.3 mm, breaking the limit of InGaAs/GaAs
quantum wells on the GaAs substrate.
Therefore, they will find important
applications in fiber communication. We use
MBE to growth InAs/GaAs quantum dots,
and extend to the InGaAs/GaAs system with
emission wavelength at 1.3 mm. Furthermore,
Fabry-Perot QD laser diodes are fabricated,
and their potentials in high-speed modulation
are investigated.