Enhanced performance of phototransistor memory by optimizing the block copolymer architectures comprising Polyfluorenes and hydrogen-bonded insulating coils
Journal
Polymer
Journal Volume
295
Date Issued
2024-03-01
Author(s)
Lin, Chen Fu
Wu, Ya Shuan
Hsieh, Hui Ching
Chen, Wei Cheng
Isono, Takuya
Satoh, Toshifumi
Lin, Yan Cheng
Kuo, Chi Ching
Abstract
Photonic transistor memory, which adopts the structure of a field-effect transistor, combines optical and electronic principles. Conjugated block copolymers (BCPs) are promising electret materials for optoelectronic applications. In this study, a series of BCPs comprising poly[2,7-(9,9-dioctylfluorene)] (PFO: A block) and poly(n-butyl acrylate-random-2-ureido-4[1H]pyrimidinone acrylate) (nBA-r-UPyA: B block), with linear-diblock (AB), branched (AB2), and linear-triblock (BAB) architectures, are synthesized to investigate hydrogen bonding effect stemming from UPyA groups. After thermal annealing, the soft segments of BCPs lead to self-assembled arrangements and smoother morphologies, providing an excellent interface for the deposition of the semiconducting channel layer. Furthermore, forming vertical phase-separated structures through thermal annealing significantly enhances the electron-capture capability. Subsequently, the BCP materials are applied in photonic transistor memory and conducted with electrical characterization. Our study reveals that different compositions of BCP architectures have a corresponding impact on the performance of photonic transistor memory devices. Consequently, AB of PFO-b-P(nBA-r-UPyA)s with a linear-diblock architecture presents an outperforming memory ratio of ∼105, outstanding memory stability over 104 s, and durability to consecutive write/erase processes.
Subjects
Block copolymers | Field-effect transistors | Nonvolatile memory | Photomemory | Polyfluorene
SDGs
Type
journal article